| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a structure of a Surrounding Gate Transistor (SGT) for reducing resistance in an upper portion of a columnar semiconductor layer, and to provide a method of manufacturing the SGT.SOLUTION: The manufacturing method comprises: a first step of forming a fin-like semiconductor layer, a first insulating film surrounding the fin-like semiconductor layer, and a columnar semiconductor layer above the fin-like semiconductor layer; a second step of forming a gate insulating film surrounding the columnar semiconductor layer, a gate electrode surrounding the gate insulating film, and gate wiring connected to the gate electrode; a third step of forming a first diffusion layer of a first conductivity type on the columnar semiconductor layer, and forming a second diffusion layer of the first conductivity type under the columnar semiconductor layer and on the fin-like semiconductor layer; and a fourth step of depositing a first interlayer insulating film, and flattening and etching-back the first interlayer insulating film to expose an upper portion of the columnar semiconductor layer, and, after exposing the columnar semiconductor layer, depositing and etching a first metal so that a first sidewall made of metal is formed around a sidewall of the upper portion of the columnar semiconductor layer.</p> |
