| 发明名称 |
MULTI-LEVEL MEMORY, MULTI-LEVEL MEMORY WRITING METHOD, AND MULTI-LEVEL MEMORY READING METHOD |
| 摘要 |
A memory comprising a memory array unit including a plurality of data units, and a controller. The controller is configured to receive data; convert the data into converted data using a conversion rule for converting a data piece into another data piece, wherein the conversion rule is selected based on the data received and independent of current data written in a data unit; and write the converted data and a conversion rule identifier corresponding to the conversion rule into the data unit. |
| 申请公布号 |
US2015019799(A1) |
申请公布日期 |
2015.01.15 |
| 申请号 |
US201314377752 |
申请日期 |
2013.02.13 |
| 申请人 |
Sony Corporation |
发明人 |
Higo Yutaka;Hosomi Masanori;Ohmori Hiroyuki;Bessho Kazuhiro;Asayama Tetsuya;Yamane Kazutaka;Uchida Hiroyuki |
| 分类号 |
G06F3/06;G06F12/02 |
主分类号 |
G06F3/06 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory comprising:
a memory array unit including a plurality of data units; and a controller configured to:
receive data;convert the data into converted data using a conversion rule for converting a data piece into another data piece, wherein the conversion rule is selected based on the data received and independent of current data written in a data unit; andwrite the converted data and a conversion rule identifier corresponding to the conversion rule into the data unit. |
| 地址 |
Tokyo JP |
