SILICON-CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON-CARBIDE SEMICONDUCTOR DEVICE

摘要

After forming a gate-insulating film consisting of one or more layers of an oxide film, a nitride film, or an oxynitride film on a silicon-carbide semiconductor substrate, a heat treatment is performed. Said heat treatment is performed for a prescribed length of time in an atmosphere that contains H2 and H2O but does not contain O2. This makes it possible to concentrate hydrogen or hydroxyl groups in a limited region that includes the interface between the silicon-carbide semiconductor substrate and the gate-insulating film. The width of the region in which hydrogen or hydroxyl groups are concentrated should be between 0.5 and 10 nm, inclusive. This makes it possible to reduce the interface state density, yielding high channel mobility.