| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for heteroepitaxially growing an Al2 O3 single crystal film on a Si substrate, capable of extremely reducing the amount of carbon contaminating the interface of the Si substrate with the Al2 O3 single crystal film and improving the deterioration in various characteristics of the Al2 O3 single crystal film, such as crystallizability and surface smoothness by radiating the Si substrate disposed in a vacuum device with N2 O gas and aluminum molecule beams. SOLUTION: This method for the heteroepitaxial growth of the Al2 O3 single crystal film on the Si substrate comprises disposing a chemically cleansed Si substrate 3 in a vacuum device (growth chamber) 5, evacuating the vacuum device 5 with a turbo molecule pump 6 and a rotary pump 7 to a vacuum degree of approximately 1×10<-7> Pa to remove impurities contained in air, etc., lowering the vacuum degree of the vacuum device 5 to approximately 3×10<-2> Pa, raising the temperature to approximately 850 deg.C, heating solid Al to 1100 deg.C with the heater of a Knudsen cell 2 to melt and evaporate the Al, opening a shutter 4 attached to the irradiation port of the Knudsen cell 2 to irradiate the Si substrate with the produced Al molecule beams, and simultaneously irradiating the Si substrate with N2 O gas from a charging pipe 1 for 30min to heteroepitaxially grow the Al2 O3 single crystal film on the substrate.
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