SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an art capable of improving voltage resistance of a semiconductor device without an increase in size of the semiconductor device. ! SOLUTION: A semiconductor device comprises: an N-type drift layer 1 in which an IGBT 31 is provided; and an annular P-type impurity region 2 which is formed in the N-type drift layer 1 so as to surround an outer peripheral part of the IGBT 31 in planar view and composes a termination structure 32. The annular P-type impurity region 2 includes a linear part 10 including a linear region 10a and a corner part 11 including a corner region 11a in which a concentration of the P-type impurity is higher than that of the linear region 10a. The linear part 10 is formed to have an impurity concentration at which an electric field intensity of the linear part 10 when a reverse voltage is applied becomes maximum on an inner peripheral side of the P-type impurity region 2 in relation to a direction from the inner peripheral side toward the outer peripheral