| 摘要 |
A variable resistance memory device and a method of manufacturing the same are provided. The variable resistance memory device includes a multi-layered insulating layer including a plurality of holes formed on a semiconductor substrate, a lower electrode formed in a bottom of each of the holes, a first spacer formed on the lower electrode and a sidewall of each of the holes, a second spacer formed on an upper sidewall of the first spacer, a third spacer formed on a lower sidewall of the first spacer below the second spacer, a variable resistance part that is formed on the lower electrode has a height lower than a height of a top of each hole, and an upper electrode formed on the variable resistance part to be buried in each hole. |
