发明名称 SEMICONDUCTOR DEVICE
摘要 According to one embodiment, a semiconductor device includes a second electrode opposite to a first electrode, a first semiconductor layer provided above the first electrode, the first semiconductor layer having first semiconductor regions of a first conductivity type alternating with second semiconductor regions of a second conductivity type in a direction generally parallel to the first electrode A second semiconductor layer of the second conductivity type is provided on the first semiconductor layer Third extend into the first semiconductor layer from the second semiconductor layer. At least one first semiconductor region includes a first portion containing hydrogen ions and a second portion between the first portion and the second semiconductor layer that has a dopant concentration lower than that of the first portion.
申请公布号 US2015014826(A1) 申请公布日期 2015.01.15
申请号 US201414188403 申请日期 2014.02.24
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 URA Hideyuki;YAMASHITA Hiroaki;ONO Syotaro;IZUMISAWA Masaru
分类号 H01L29/06 主分类号 H01L29/06
代理机构 代理人
主权项 1. A semiconductor device, comprising: a first electrode on a substrate; a second electrode separated from the first electrode in a first direction; a first semiconductor layer provided above the first electrode and including first semiconductor regions of a first conductivity type that alternate with second semiconductor regions of a second conductivity type in a second direction substantially perpendicular with the first direction; a second semiconductor layer of the second conductivity type provided on the first semiconductor layer; a third semiconductor layer of the first conductivity type provided on the second semiconductor layer and in contact with the second electrode; third electrodes extending from the third semiconductor layer into the first semiconductor regions; and an insulating film provided between each third electrode and each of the third semiconductor layer, the second semiconductor layer, and the first semiconductor regions; wherein at least one first semiconductor region comprises a first portion containing hydrogen ions and a second portion that is between the first portion and the second semiconductor layer and has a dopant concentration lower than that of the first portion.
地址 Tokyo JP