THICK CONDUCTIVE STACK PLATING PROCESS WITH FINE CRITICAL DIMENSION FEATURE SIZE FOR COMPACT PASSIVE ON GLASS TECHNOLOGY

摘要

An integrated circuit device includes a substrate, and a first interlayer dielectric layer on the substrate that includes a first conductive layer and a second conductive layer. The integrated circuit device also includes a first conductive stack including a third conductive layer coupled to a portion of the second conductive layer with a first via. The integrated circuit device further includes a second conductive stack comprising a fourth conductive layer directly on a portion of the third conductive layer that is isolated from the substrate. The integrated circuit device also includes a second interlayer dielectric layer surrounding the third conductive layer and the fourth conductive layer.

主权项

1. An integrated circuit device, comprising:
a substrate; a first interlayer dielectric layer on the substrate comprising a first conductive layer and a second conductive layer; a first conductive stack comprising a third conductive layer coupled to a portion of the second conductive layer with a first via; a second conductive stack comprising a fourth conductive layer directly on a portion of the third conductive layer that is isolated from the substrate; and a second interlayer dielectric layer surrounding the third conductive layer and the fourth conductive layer.