发明名称 |
III-Nitride Semiconductor Device with Reduced Electric Field |
摘要 |
A conductive field plate is formed between the drain electrode and gate of each cell of a III-Nitride semiconductor and is connected to the source electrode to reduce the electric field between the gate and the drain. The electrodes may be supported on N+ III-Nitride pad layers and the gate may be a Schottky gate or an insulated gate. |
申请公布号 |
US2015014701(A1) |
申请公布日期 |
2015.01.15 |
申请号 |
US201414332292 |
申请日期 |
2014.07.15 |
申请人 |
International Rectifier Corporation |
发明人 |
Briere Michael A. |
分类号 |
H01L29/778;H01L29/40;H01L29/47;H01L29/20 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
El Segundo CA US |