发明名称 MICROCRYSTALLINE SILICON SOLAR CELL STRUCTURE AND MANUFACTURING METHOD THEREOF
摘要 A microcrystalline silicon solar cell structure and a manufacturing method thereof are revealed to comprise a substrate, a n-type semiconductor layer deposited on the substrate, an intrinsic layer deposited on n-type semiconductor layer and a p-type semiconductor layer deposited on the intrinsic layer and a transparent conductive oxide layer on the p-type semiconductor layer, wherein the intrinsic layer also acts as a major light-absorbing layer of the microcrystalline silicon solar cell by doping 8˜12 vppm p-type ions of the group III element therein, which enables to modify the intrinsic layer with slight n type to improve the conversion efficiency of a battery.
申请公布号 US2015013759(A1) 申请公布日期 2015.01.15
申请号 US201414310008 申请日期 2014.06.20
申请人 NATIONAL CHENG KUNG UNIVERSITY 发明人 Gau Chie;Jiang Yeu-Long;Li Pei-Ling
分类号 H01L31/077;H01L31/0224;H01L31/18;H01L31/028;H01L31/0288 主分类号 H01L31/077
代理机构 代理人
主权项 1. A method for manufacturing a microcrystalline silicon solar cell comprising the steps of: step one: depositing a n-type semiconductor layer on a substrate; step two: depositing an intrinsic layer on the n-type semiconductor layer, wherein the intrinsic layer acts as a light absorbing layer in the solar cell by doping 8-12 vppm p-type ions of the group III element into the intrinsic layer. step three: depositing a p-type semiconductor layer on the intrinsic layer; step four: depositing a transparent conductive oxide layer on the p-type semiconductor layer.
地址 Tainan City TW