发明名称 |
MICROCRYSTALLINE SILICON SOLAR CELL STRUCTURE AND MANUFACTURING METHOD THEREOF |
摘要 |
A microcrystalline silicon solar cell structure and a manufacturing method thereof are revealed to comprise a substrate, a n-type semiconductor layer deposited on the substrate, an intrinsic layer deposited on n-type semiconductor layer and a p-type semiconductor layer deposited on the intrinsic layer and a transparent conductive oxide layer on the p-type semiconductor layer, wherein the intrinsic layer also acts as a major light-absorbing layer of the microcrystalline silicon solar cell by doping 8˜12 vppm p-type ions of the group III element therein, which enables to modify the intrinsic layer with slight n type to improve the conversion efficiency of a battery. |
申请公布号 |
US2015013759(A1) |
申请公布日期 |
2015.01.15 |
申请号 |
US201414310008 |
申请日期 |
2014.06.20 |
申请人 |
NATIONAL CHENG KUNG UNIVERSITY |
发明人 |
Gau Chie;Jiang Yeu-Long;Li Pei-Ling |
分类号 |
H01L31/077;H01L31/0224;H01L31/18;H01L31/028;H01L31/0288 |
主分类号 |
H01L31/077 |
代理机构 |
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代理人 |
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主权项 |
1. A method for manufacturing a microcrystalline silicon solar cell comprising the steps of:
step one: depositing a n-type semiconductor layer on a substrate; step two: depositing an intrinsic layer on the n-type semiconductor layer, wherein the intrinsic layer acts as a light absorbing layer in the solar cell by doping 8-12 vppm p-type ions of the group III element into the intrinsic layer. step three: depositing a p-type semiconductor layer on the intrinsic layer; step four: depositing a transparent conductive oxide layer on the p-type semiconductor layer. |
地址 |
Tainan City TW |