| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize a semiconductor relay, in which trouble, in which the current-carrying quantities of DMOS FETs are reduced, is not generated, by forming a parasitic transistor by composing the semiconductor relay on one ship by the two switching elements DMOS FETs and a shunt resistor connected to the gates of the DMOS FETs as a diffusion resistor and working the semiconductor relay so that signals inputted to the gates of the DMOS FETs are bypassed. SOLUTION: This relay 1 has a light-emitting element 1 for generating a light signal in response to an input signal, a photodiode array 2 for receiving the above-mentioned light signal and generating photoelectromotive force and MOS FETs 4, 5, in which the photoelectromotive force is applied among gates and sources and which are brought to conductive state and used for outputs. The MOS FETs 4, 5 for the outputs are formed onto the same chip as horizontal type high breakdown strength DMOS FETs and a shunt resistor 3 connected in parallel among the above-mentioned gates and sources as a thin-film resistor at that time and the generation of parasitic transistor action is prevented, thereby preventing the lowering of a current passing through the DMOS FETs 4, 5.</p> |
