| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a chemical vapor deposition apparatus with which gas concentration differentials due to reactive gas injection position in reaction chamber are minimized and uniformity of film quality formed on wafer is enhanced. SOLUTION: A chemical vapor deposition apparatus is comprised of a cylindrical reaction chamber 10, wafer placement belts 14 placed in the reaction chamber 10 along the direction of the length of the chamber for placing wafers and admission openings 11a, 12a and 13a on the lower part of the reaction chamber 10. Several injectors 11, 12 and 13 on the wall along the direction of the length of the reaction chamber 10 and extending toward the upper part of the chamber for supplying the chamber with reaction gas through the admission openings 11a, 12a and 13a are provided. The ratio of the height of the injectors 11, 12 and 13 measured from the admission openings 11a, 12a and 13a to the height of the wafer placement belts 14 is determined as follows: 0.792-0.800 for the first injector 11, 0.559-0.567 for the second injector 12, and 0.190-0.198 for the third injector 13.</p> |
