发明名称 BIPOLAR TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To improve the heat radiative property of the operation region of a bipolar transistor, to reduce heat resistance and to provide the efficient bipolar transistor with high output. SOLUTION: The other end of an emitter air bridge 4 which is thermally and electrically connected to an emitter electrode 7 is connected to an emitter wiring 1 on a semi-insulation substrate 11. The emitter wiring 1 is pulled out from the lower part of the other wirings such as a base wirings 2 and a collector wiring 3, for example, without electric contact, and it is provided in a large area detached from the operation region. Thus, heat generated in a device can considerably efficiently be set free to a substrate 11-side and heat resistance can be reduced with such structure.
申请公布号 JPH09213711(A) 申请公布日期 1997.08.15
申请号 JP19960268873 申请日期 1996.10.09
申请人 MITSUBISHI ELECTRIC CORP 发明人 MIURA TAKESHI;SHIMURA TERUYUKI;KATO MANABU
分类号 H01L29/73;H01L21/331;H01L23/34;H01L29/737;(IPC1-7):H01L21/331 主分类号 H01L29/73
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