| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a thin film transistor, which is superior in TFT(thin film transistor) characteristics, is high in mobility and moreover, facilitates an activation of an LDD(lightly doped drain) region, and a liquid crystal display device, which is low in power consumption and can be driven at high speed. SOLUTION: This transistor is provided with a gate electrode 107, a channel region 103a provided under the electrode 107 via a gate insulating film 104a, and source and drain regions 103b provided on both sides of the region 103a. Here, the transistor is characterized in that a hydrogen concentration in the above region 103a is lower than that in the source and drain regions 103b, or a hydrogen concentration in the region 104a, which is adjacent to the region 103a, of the film 104a is lower than that in a region 104b, which is adjacent to the source and drain region 103b, of the film 104a.</p> |
