| 摘要 |
Disclosed is a semiconductor device (10), which is provided with a semiconductor element (100) that can bidirectionally flow a current. The semiconductor element (100) is provided with a pair of a first ohmic electrode (104a) and a second ohmic electrode (104b), and a pair of a first gate electrode (105a) and a second gate electrode (105b). The semiconductor device (10) is also provided with a control unit (120), which brings the semiconductor element (100) into an electrically connected state. The control unit (120) supplies a first electric signal to a high potential-side gate electrode, and supplies a second electric signal to a low potential-side gate electrode, such that, in the case where the semiconductor element (100) is electrically connected, the potential of the high potential-side gate electrode, said potential corresponding to a high potential-side ohmic electrode with the high potential-side ohmic electrode as reference, is lower than the potential of the low potential-side gate electrode, said potential corresponding to the low potential-side ohmic electrode with the low potential-side ohmic electrode as reference. |
