GATE STRUCTURES AND METHODS OF MANUFACTURE

摘要

A metal gate structure with a channel material and methods of manufacture such structure is provided. The method includes forming dummy gate structures on a substrate. The method further includes forming sidewall structures on sidewalls of the dummy gate structures. The method further includes removing the dummy gate structures to form a first trench and a second trench, defined by the sidewall structures. The method further includes forming a channel material on the substrate in the first trench and in the second trench. The method further includes removing the channel material from the second trench while the first trench is masked. The method further includes filling remaining portions of the first trench and the second trench with gate material.

主权项

1. A device comprising:
a recess formed in a substrate and defining a portion of a first trench; a channel material formed on the substrate within the recess of the first trench; an oxide layer formed on the channel material of the first trench; a first metal gate structure formed on the oxide layer of the first trench; and a second metal gate structure formed on the substrate within a second trench, wherein:
the channel material is material with high mobility of charge carriers;the first and second gate structures comprise:
an insulating material;a high-k dielectric material; andone or more metal materials tailored for a designed work function.