| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device which has a small leakage current in a current inhibition region and can perform a high-output operation and a high-temperature operation without causing difficulties in a step of fabricating the semiconductor device. <P>SOLUTION: Making good use of the feature of an organic metal vapor-phase growth method in which there is no crystal growth on an etching mask 13 made of a dielectric, the current inhibition region comprising a p-type InP current inhibition layer 5 and an n-type InP current inhibition layer 6 is formed in a region other than an upper surface of a mesa stripe, and a current inhibition region at a mesa-stripe side surface portion is grown to be substantially horizontal to the etching mask 13. The n-type InP current inhibition layer 6 is grown into a p-type InP clad layer 4, namely, onto the p-type InP clad layer, so that a distance W1 between n-type InP current inhibition layers 6 constituting the current inhibition region is narrower than the width W2 of the p-type clad layer 4 being in contact with the n-type InP current inhibition layers 6. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
