| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a display capable of suppressing variation of capacity between a gate and a source in a thin film transistor in a pixel part. <P>SOLUTION: In the display comprises pixel electrodes PXs formed in each of pixel regions; and a thin film transistor for driving pixel electrodes, the thin film transistor comprises a first corner B and a second corner C formed at a diagonal position; and a third corner sharing a first side where the first corner B is formed and a second side where the second corner C is formed, and further comprises a semiconductor layer AS formed by overlapping a gate electrode connected to a gate line GL via a gate insulating film; a drain electrode DT formed by extending a part of a drain line DL and overlapped with the third corner; a first source electrode ST1 formed by overlapping a edge and the first corner B and connecting the other edge to pixel electrodes; and a second source electrode ST2 by overlapping a edge and the second corner C and connecting the other edge to pixel electrodes PXs. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
