METHOD OF FORMING FINE PATTERNS OF SEMICONDUCTOR DEVICE

摘要

A method of forming a micro pattern of a semiconductor device may include forming an acid-extinguisher containing film on a substrate, forming a photoresist film containing a potential acid on the acid-extinguisher containing film, forming an exposed area containing acids by exposing a portion of the photoresist film to light, forming an insoluble polymer thin film between the acid-extinguisher containing film and the exposed area by extinguishing the acids of the exposed area at an interface between the acid-extinguisher containing film and the exposed area, developing the photoresist film to form a space exposing the insoluble polymer thin film in the exposed area and a photoresist pattern integrally connected to the insoluble polymer thin film, exposing the acid-extinguisher containing film through the space by removing the insoluble polymer thin film, and removing the acid-extinguisher containing film exposed through the space.

主权项

1. A method of forming a micro pattern of a semiconductor device, the method comprising:
forming an acid-extinguisher containing film on a substrate; forming a photoresist film on the acid-extinguisher containing film, the photoresist film containing a potential acid; forming an exposed area by exposing a portion of the photoresist film to light, the exposed area containing acids; forming an insoluble polymer thin film between the acid-extinguisher containing film and the exposed area by extinguishing the acids of the exposed area at an interface between the acid-extinguisher containing film and the exposed area; developing the photoresist film to form a space exposing the insoluble polymer thin film in the exposed area and a photoresist pattern integrally connected to the insoluble polymer thin film; exposing the acid-extinguisher containing film through the space by removing the insoluble polymer thin film; and removing the acid-extinguisher containing film exposed through the space.