NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor storage device is disclosed. The semiconductor device includes a semiconductor substrate; and a gate electrode disposed above the semiconductor substrate. The gate electrode includes a conductive film, a metal film, and a first insulating film. In a cross sectional view of the gate electrode, at least the metal film includes a receding portion receding in a lateral direction as compared to the first insulating film, and wherein a second insulating film is disposed in the receding portion and contacts sidewalls of the metal film.

主权项

1. A semiconductor storage device comprising:
a semiconductor substrate; and a gate electrode disposed above the semiconductor substrate; wherein the gate electrode includes a conductive film, a metal film, and a first insulating film and wherein, in a cross sectional view of the gate electrode, at least the metal film includes a receding portion receding in a lateral direction as compared to the first insulating film, and wherein a second insulating film is disposed in the receding portion and contacts sidewalls of the metal film.