| 摘要 |
PROBLEM TO BE SOLVED: To form a resist pattern superior in dimensional uniformity by using a reticule with dispersion in the pattern. SOLUTION: A positive resist 13 is formed on base bodies 11 and 12, a prescribed region of the resist 13 is photosensed by using the reticule for which dimensional fluctuation is present in an opening part, and the dissolving part and remaining part of the resist 13 are defined. Then, development is performed in a time for which not all the dissolving part defined largest for a design dimension among the defined dissolving part of the resist 13 is developed. Next, a development adjustment film 14 which is soluble in a developer and slower than the dissolving speed of the resist 13 is formed on the resist 13, the development of the development adjustment film 14 and the resist 13 is performed, and a resist pattern is formed. |
