COMPOSITE MATERIAL FOR SEMICONDUCTOR HEAT SINK AND ITS PRODUCTION

摘要

PROBLEM TO BE SOLVED: To obtain characteristics adapted to the balance between the thermal expansion coefficient and thermal conductivity determined in an actual electronic part (including a semiconductor device), etc. SOLUTION: A high-pressure vessel is kept in the initial state (S1) and the first chamber is then located in the lower part. Copper or a copper alloy is further placed in the first chamber and SiC is set in the second chamber (S2). The high-pressure vessel is subsequently hermetically sealed and evacuation in the interior of the high- pressure vessel is then carried out through a suction pipe (S3). A heater is subsequently energized to thermally melt the copper or copper alloy in the first chamber (S4). The high-pressure vessel is turned 180 deg. at the stage in which the molten copper in the first chamber attains a prescribed temperature (S5) to afford a state of the SiC dipped in the molten copper (S6). A gas for impregnation is then introduced through a gas introduction pipe into the high-pressure vessel to pressurize the interior of the high-pressure vessel. Thereby, the molten copper is impregnated into the SiC. The high-pressure vessel is subsequently turned 180 deg. (S7) and the gas for impregnation in the high-pressure vessel is then discharged through a gas lead-out pipe. A gas for cooling is simultaneously introduced through the gas introduction pipe into the high- pressure vessel to cool the high-pressure vessel (S8).