| 摘要 |
<p>PROBLEM TO BE SOLVED: To avoid the contact between adjacent semiconductor wafers even if the semiconductor wafers are rattling in support grooves, by a method wherein the wall thickness of the teeth in a semiconductor wafer contact edge in a front domain is made within a specific range. SOLUTION: A standard wafer cassette is provided with the teeth 8, 10 comprising the support grooves 7, 9 for supporting in parallel multiple semiconductor wafers with at a specific interval in front and rear domains. Next, when the wafer cassette is turned sideways, the protrusive strips 8a having the sections thereof taking almost mesa shape are extended along the front end edges to be the contact edge parts of the semiconductor wafers on the groove sides in the support groove 7 on the opposite side to the wafer mounting surface. At this time, the protrusive size of the protrusive strips 8a is to be made so that the wall thickness T of the teeth 8 containing the protrusive strips 8a may be as follows, i.e., T>Lt+Rt. The Lt and Rt are the protrusion in the bottom side and the top side on the front end of the semiconductor wafer WL.</p> |
