发明名称 ADDRESS GENERATING DEVICE AND METHOD FOR DYNAMIC MEMORY TEST CIRCUIT
摘要 <p>PROBLEM TO BE SOLVED: To provide an address generating device and a method for a dynamic memory test circuit generating simply an address for testing a dynamic memory which uses all usable addresses or which does not use a high-order address or an intermediate address among all usable addresses. SOLUTION: An up-address is obtained by up-counting an address used by a dynamic memory, a down-counted down-address is obtained by reversing a counted value of N bits, a down-address is obtained by subtracting a counted value of N bits from the maximum address, and a down-address is obtained by synthesizing a bit in which MSB is reversed from a counted value of N bits and a bit in which LSB of a counted value of N bits is subtracted from LSB of the maximum address used from a dynamic memory. And an address for testing selectively a dynamic memory is generated in accordance with a step at which a down-address, an up-address, and a dynamic memory are tested.</p>
申请公布号 JPH1131400(A) 申请公布日期 1999.02.02
申请号 JP19980108206 申请日期 1998.04.17
申请人 SAMSUNG ELECTRON CO LTD 发明人 KIN KENTETSU
分类号 G01R31/28;G06F11/263;G11C29/12;G11C29/20;(IPC1-7):G11C29/00 主分类号 G01R31/28
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