MASS PRODUCTION METHOD OF SILICON NANOWIRES

摘要

The present invention relates to a synthesis method for silicon nanowires comprising: a step of preparing Si substrates; a step of forming a first layer of certain materials on the Si substrate; a step of forming multiple nanoparticles consisting of the materials on the Si substrate by thermal aggregation by performing rapid thermal annealing; a step of forming nanoholes having a size of 80 nm or less on the surface of the Si substrate by performing first electroless etching (MCE); a step of a secondary layer of certain materials on the surface of the Si substrate on which the nanoholes are formed; and a step of forming Si nanowires having a diameter of 80 nm or less by performing secondary electroless etching.