METHOD FOR MANUFACTURING SILICIDE OF SEMICONDUCTOR DEVICE AND SOURCE/DRAIN FOR SEMICONDUCTOR DEVICE

摘要

The present invention relates to a method for forming silicide of a semiconductor device and a source/drain for a semiconductor device. The method includes the steps of: preparing a silicon substrate including silicon; depositing ytterbium, refractory metal, and a transition metal nitride on the silicon substrate to form a ytterbium alloy thin film using ytterbium and refractory metal, and to form a capping layer using the transition metal nitride; and forming ytterbium silicide on the interfacial surface between the silicon substrate and the ytterbium alloy thin film by performing heat treatment for the silicon substrate. According to the method for forming silicide, the ytterbium silicide, which is epitaxially grown, can be stably formed, so that a source and a drain having a low Schottky barrier can be realized. Accordingly, the method can be applied to a semiconductor field including a transistor.