| 摘要 |
<p>A fin-type field effect transistor includes a first fin which includes a first source, a first drain, and a first channel. The fin-type field effect transistor includes a second fin which includes a second source, a second drain, and a second channel. The fin-type field effect transistor includes a first semiconductor region under the first fin and a second semiconductor region under the second fin. A first reaction region is adjacent to the first semiconductor region, but a second reaction region is adjacent to the second semiconductor region. The first reaction region has a first dimension to induce a first strain in the first channel. A second reaction region has a second dimension to induce a second strain in the second channel. The first strain is practically equal to the second strain. A method of manufacturing a preferable fin-type field effect transistor is provided.</p> |
