Method of fabricating semiconductor laser

摘要

There is provided a method of fabricating a semiconductor laser including a two-dimensional photonic crystal. The method comprises the steps of growing an In X1 Ga 1-X1 N (0 < X1 < 1) layer on a gallium nitride-based semiconductor region in a reactor; after taking out a substrate product including the In X1 Ga 1-X1 N layer from the reactor, forming a plurality of openings for a two-dimensional diffraction grating of the two-dimensional photonic crystal in the In X1 Ga 1-X1 N layer to form a patterned Inx1Ga 1-X1 N layer; and growing an Al X2 Ga 1-X2 N (0 ‰¤ X2 ‰¤ 1) layer on a top surface of the patterned In X1 Ga 1-X1 N layer to form voids associated with the openings.