发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND APPARATUS FOR PRODUCING SEMICONDUCTOR |
摘要 |
A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, includes: forming an oxide layer including mainly an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including mainly a silicate of the metal element by making the oxide layer into silicate by annealing under a reducing atmosphere. |
申请公布号 |
KR20150005533(A) |
申请公布日期 |
2015.01.14 |
申请号 |
KR20147027999 |
申请日期 |
2013.04.02 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
MATSUMOTO KENJI;HAMADA TATSUFUMI;MAEKAWA KAORU |
分类号 |
H01L21/3205;H01L21/31;H01L21/316;H01L21/768 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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