发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND APPARATUS FOR PRODUCING SEMICONDUCTOR
摘要 A method for manufacturing a semiconductor device for forming a metal element-containing layer on an insulating layer in which a concave portion is formed, includes: forming an oxide layer including mainly an oxide of the metal element on the insulating layer including the concave portion; and forming a silicate layer including mainly a silicate of the metal element by making the oxide layer into silicate by annealing under a reducing atmosphere.
申请公布号 KR20150005533(A) 申请公布日期 2015.01.14
申请号 KR20147027999 申请日期 2013.04.02
申请人 TOKYO ELECTRON LIMITED 发明人 MATSUMOTO KENJI;HAMADA TATSUFUMI;MAEKAWA KAORU
分类号 H01L21/3205;H01L21/31;H01L21/316;H01L21/768 主分类号 H01L21/3205
代理机构 代理人
主权项
地址