发明名称 |
PROCESS FOR CLEANING COMPOUND SEMICONDUCTOR WAFER |
摘要 |
A process for cleaning a compound semiconductor wafer; the compound semiconductor wafer comprises, taking gallium arsenide (GaAs) as a representative, a group III-V compound semiconductor wafer. The process comprises the following steps: 1) treating the wafer with a mixture of dilute ammonia, hydrogen peroxide and water at a temperature not higher than 20°C; 2) washing the wafer with deionized water; 3) treating the wafer with an oxidant; 4) washing the wafer with deionized water; 5) treating the wafer with a dilute acid solution or a dilute alkali solution; 6) washing the wafer with deionized water; and 7) drying the resulting wafer. The process can improve the cleanliness, micro-roughness and uniformity of the wafer surface. |
申请公布号 |
EP2629319(A4) |
申请公布日期 |
2015.01.14 |
申请号 |
EP20110831931 |
申请日期 |
2011.10.14 |
申请人 |
BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD. |
发明人 |
REN, DIANSHENG;LIU, QINGHUI |
分类号 |
H01L21/02 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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