| 摘要 |
<p>A cascode switch device is provided. The cascode switch device includes a high voltage, HV, transistor (10) having a first drain electrode (D1), a first source electrode (S1), and a first gate electrode (G1) and a low voltage, LV, transistor (12) cascoded with the HV transistor (10) and having a second drain electrode (D2), a second source electrode (S2), and a second gate electrode (G2). A first ratio of an equivalent capacitance of a second drain-to-source capacitance (120) between the second drain and the second source electrodes (D2, S2), a gate-to-drain capacitance (122) between the second gate and the second drain electrodes (G2, D2) and a gate-to-source capacitance (102) between the first gate and the first source electrodes (G1, S1) to a first drain-to-source capacitance (100) between the first source and the first drain electrodes (S1, D1) being based on a second ratio of a drain voltage (Vss) of the HV transistor (10) to a break-down voltage of the LV transistor (12) so as to provide voltage protection for the LV transistor (12).</p> |
