| 摘要 |
<p>A thin-film transistor (10) having an active layer (14), a source electrode (16), a drain electrode (18), a gate insulating film (20), and a gate electrode (22), the active layer being an amorphous oxide semiconductor layer including at least In as a metal element, the composition ratio of In with respect to metallic elements included in the active layer being at least 50% in the active layer, the thickness of the active layer being 25 nm or less, the source electrode and the drain electrode each including at least two layers, the layers closest to the active layer in the thickness direction in the source electrode and the drain electrode being oxide layers (16A, 18A), respectively, including at least Ga as a metal element, and the composition ratio of Ga with respect to metallic elements included in the oxide layer being at least 30% in the oxide layer.</p> |
