| 摘要 |
<p>An epitaxial growth furnace for growing an epitaxial layer on a semiconductor wafer by CVD in reactive chamber includes a wafer holder, which comprises an opening for exposing the area to be processed of the semiconductor wafer, a flange for engagement with the whole chamfered edge of the area to be processed of the semiconductor wafer, and a plurality of jaws to be engaged detachably with the border of the semiconductor wafer on the back of the area to be processed.</p> |
