发明名称 |
METHOD FOR FORMING GATE ELECTRODE OF SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE: A method for forming gate electrode of semiconductor device is provided to prevent a quality decrease and a fault of a gate oxidation film by performing an annealing process over 5 minutes in a low atmosphere pressure and high temperature vacuum condition before the performance of a spacer process. CONSTITUTION: A gate insulating film(14') is etched for performing a self-align to a gate electrode (20') and a reside of a substrate surface is removed using a wet cleaning process. An annealing process is performed over 5 minutes in a low atmosphere pressure and high temperature vacuum condition before the performance of a spacer process, and then a fluorine is removed from a surface of a tungsten silicide film. A silicon nitration film(22') is deposited at 500 to 2000 angstrom thickness using a low pressure chemical vapor deposition. The silicon nitration film(22') is etched using a dry etching process and then a spacer is formed to a side wall portion of the gate electrode(20').
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申请公布号 |
KR20000024908(A) |
申请公布日期 |
2000.05.06 |
申请号 |
KR19980041711 |
申请日期 |
1998.10.02 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD. |
发明人 |
KIM, HYUNG GYUN;KI, YOUNG JONG;KIM, WOO JIN;KIM, DONG JUN |
分类号 |
H01L21/336;(IPC1-7):H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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地址 |
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