| 摘要 |
<p>PROBLEM TO BE SOLVED: To enhance the heat dissipation property and reliability of a semiconductor device, by a method wherein as the material for a support material, a composite metallic material formed by dispersing the powder of a second metal in a matrix consisting of a first metal is used, the heat conductivity of the first metal is made higher than that of the second metal, and the thermal expansion coefficient of the second metal is made lower than that of the first metal. SOLUTION: A bulk of a support member 125 is formed into a constitution, wherein the powder 125B of a second metal is dispersed in a matrix 125A consisting of a first metal, and an Ni-plated layer 125C is formed on the surface of the bulk in a thickness of desirably 2 to 7μm from the viewpoint of the impartment of a wettability to a solder material. A semiconductor device is constituted into a structure, wherein a metal bonded circuit board integrally formed by bonding an AIN ceramic board to a Cu plate and the member 125 constituted of the matrix 125A constituting of Cu as the high-heat conductivity first metal, and the powder 125B of an invar which is used as the second metal of a thermal expansion coefficient lower than that of the first metal, are bonded together with a brazing metal.</p> |
