| 摘要 |
PURPOSE: A resist stripping liquid is provided to easily strip a negative type photo resist by including hydrocarbon-based solvent including plural types of naphtalenic compound having substituent and benzene sulfonic acid. CONSTITUTION: A resist stripping liquid comprises (a) 70-95 mass% of hydrocarbon-based solvent and (b) 5-30 mass% of benzene sulfonic acid. The hydrocarbon-based solvent includes 3 kinds or more of alkyl group substituted naphthalene, and the total content of those are 50 mass% or more. The benzene sulfonic acid is substituted to alkyl group and the total carbon number is 8 or more. The resist stripping liquid additionally comprises (c) carbon number 6 or more of 1-10 mass% of fatty acid ester. A negative type photo resist strip using the resist stripping liquid is perform in solution temperature at less than 60 degree Celsius. The negative type photo resist comprises polyisoprene compound. |
