METHOD FOR PRODUCING A DOPED REGION IN A SEMICONDUCTOR LAYER

摘要

The invention relates to a method for producing a doped region in a semiconductor layer, having a method step A, in which a doping layer is applied onto the semiconductor layer, said doping layer containing at least one dopant for producing the doped region, and a method step B, in which the dopant is diffused into the semiconductor layer under the effect of heat. The invention is characterized in that a passivating layer is directly or indirectly applied onto a surface of the semiconductor layer prior to method step A in a method step A0, the doping layer is directly or indirectly applied onto the passivating layer in method step A, and the dopant is introduced from the doping layer into the semiconductor layer through the passivating layer in method step B, wherein the passivating layer (4) is applied by means of a chemical and/or physical method; the dopant is a dopant of the group consisting of boron, phosphorus, gallium, arsenic, or indium; the passivating layer (4) is formed with a dopant concentration less than 5x1019 cm-3 in method step A0; and the doping layer is formed with a dopant concentration greater than 1020 cm-3 in method step A.