Impurity analysis device and method

摘要

According to one embodiment, an impurity analysis method comprises performing vapor-phase decomposition on a silicon-containing film formed on a substrate, heating the substrate at a first temperature after vapor phase decomposition, heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film, dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution, and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark.

主权项

1. An impurity analysis method, comprising:
performing vapor-phase decomposition on a silicon-containing film formed on a substrate; heating the substrate at a first temperature after vapor phase decomposition; heating the substrate at a second temperature higher than the first temperature after heating at the first temperature, to remove a silicon compound deposited on the surface of the silicon-containing film; dropping a recovery solution onto the substrate surface after heating at the second temperature and moving the substrate surface, to recover metal into the recovery solution; and drying the recovery solution, to perform X-ray fluorescence spectrometry on a dried mark; wherein a hydrofluoric acid vapor is supplied to the substrate surface after heating at the second temperature and before dropping of the recovery solution, to make the substrate surface hydrophobic.