| 发明名称 | Vertical stacking of graphene in a field-effect transistor | ||
| 摘要 | A graphene field-effect transistor is disclosed. The graphene field-effect transistor includes a first graphene sheet, a first gate layer coupled to the first graphene sheet and a second graphene sheet coupled to the first gate layer opposite the first gate layer. The first gate layer is configured to influence an electric field within the first graphene sheet as well as to influence an electric field of the second graphene sheet. | ||
| 申请公布号 | US8932919(B2) | 申请公布日期 | 2015.01.13 |
| 申请号 | US201213683148 | 申请日期 | 2012.11.21 |
| 申请人 | International Business Machines Corporation | 发明人 | Farmer Damon B.;Franklin Aaron D.;Oida Sataoshi;Smith Joshua T. |
| 分类号 | H01L29/66;H01L21/336 | 主分类号 | H01L29/66 |
| 代理机构 | Cantor Colburn LLP | 代理人 | Cantor Colburn LLP ;Alexanian Vazken |
| 主权项 | 1. A method of forming a graphene field-effect transistor, comprising: forming a first graphene sheet on a substrate; depositing a first gate layer on a top surface of the first graphene sheet, wherein the first gate layer influences an electric field of the first graphene sheet; depositing at least one of a source contact and a drain contact on atoll the top surface of the first graphene sheet; and depositing a second graphene sheet on top surfaces of the first gate layer and the at least one of the source contact and the drain contact, wherein the first gate layer influences an electric field of the second graphene sheet. | ||
| 地址 | Armonk NY US | ||