Semiconductor light emitting device and method for manufacturing the same

摘要

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a fluorescent material layer and a scattering layer. The semiconductor layer has a first surface and a second surface on an opposite side to the first surface and includes a light emitting layer. The p-side electrode and the n-side electrode are provided on the semiconductor layer on a side of the second surface. The fluorescent material layer is provided on a side of the first surface and includes a plurality of fluorescent materials and a first bonding material. The first bonding material integrates the fluorescent materials. The scattering layer is provided on the fluorescent material layer and includes scattering materials and a second bonding material. The scattering materials are configured to scatter radiated light of the light emitting layer. The second bonding material integrates the scattering materials.

主权项

1. A semiconductor light emitting device comprising:
a semiconductor layer having a first surface and a second surface on an opposite side to the first surface and including a light emitting layer; a p-side electrode provided on the semiconductor layer; an n-side electrode provided on the semiconductor layer; a first insulating film provided at a peripheral region adjacent to a side surface of the semiconductor layer; a fluorescent material layer provided on a side of the first surface and on the first insulating film, the fluorescent material layer including a plurality of fluorescent materials and a first bonding material, the fluorescent materials being excited by radiated light of the light emitting layer and radiating light of a different wavelength from the radiated light of the light emitting layer, the first bonding material integrating the fluorescent materials and being transparent to the radiated light of the light emitting layer and the radiated light of the fluorescent material; and a scattering layer provided on the fluorescent material layer, the scattering layer including a plurality of scattering materials and a second bonding material, the scattering materials being configured to scatter the radiated light of the light emitting layer, the second bonding material integrating the scattering materials and being configured to transmit the radiated light of the light emitting layer and the radiated light of the fluorescent material, wherein the first surface of the semiconductor layer and a boundary between the first insulating film and the fluorescent material layer have a step portion.