发明名称 |
SiC epitaxial wafer and semiconductor device |
摘要 |
An SiC epitaxial wafer of an embodiment includes, an SiC substrate, and a p-type first SiC epitaxial layer that is formed on the SiC substrate and contains a p-type impurity and an n-type impurity. An element A and an element D being a combination of Al (aluminum), Ga (gallium), or In (indium) and N (nitrogen), and/or a combination of B (boron) and P (phosphorus) when the p-type impurity is the element A and the n-type impurity is the element D. The ratio of the concentration of the element D to the concentration of the element A in the combination(s) is higher than 0.33 but lower than 1.0. |
申请公布号 |
US8933464(B2) |
申请公布日期 |
2015.01.13 |
申请号 |
US201414205792 |
申请日期 |
2014.03.12 |
申请人 |
Kabushiki Kaisha Toshiba |
发明人 |
Nishio Johji;Shimizu Tatsuo;Ota Chiharu;Shinohe Takashi |
分类号 |
H01L31/0312;H01L29/16;H01L21/02;C30B29/36 |
主分类号 |
H01L31/0312 |
代理机构 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
代理人 |
Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
主权项 |
1. An SiC epitaxial wafer comprising:
an SiC substrate; and a p-type first SiC epitaxial layer formed on the SiC substrate, the first SiC epitaxial layer containing a p-type impurity and an n-type impurity, the p-type impurity being an element A and the n-type impurity being an element D, the element A and the element D forming at least a first combination or a second combination, the first combination being a combination of the element A selected from a group consisting of Al (aluminum), Ga (gallium), and In (indium) and the element D being N (nitrogen), the second combination being a combination of the element A being B (boron) and the element D being P (phosphorus), a ratio of a concentration of the element D to a concentration of the element A forming at least one of the combinations being higher than 0.33 but lower than 1.0. |
地址 |
Minato-ku JP |