| 发明名称 |
Method of fabricating diamond semiconductor and diamond semiconductor formed according to the method |
| 摘要 |
Disclosed herein is a new and improved system and method for fabricating diamond semiconductors. The method may include the steps of selecting a diamond semiconductor material having a surface, exposing the surface to a source gas in an etching chamber, forming a carbide interface contact layer on the surface; and forming a metal layer on the interface layer. |
| 申请公布号 |
US8933462(B2) |
申请公布日期 |
2015.01.13 |
| 申请号 |
US201213725978 |
申请日期 |
2012.12.21 |
| 申请人 |
AKHAN Semiconductor, Inc. |
发明人 |
Khan Adam |
| 分类号 |
H01L29/15;H01L21/768;H01L29/16;H01L21/04;H01L29/66;H01L29/868 |
主分类号 |
H01L29/15 |
| 代理机构 |
|
代理人 |
Thompson Lawrence E.;Kostopoulos Kostas;Jerisat Martin |
| 主权项 |
1. A method of fabricating diamond semiconductor, the method including the steps of:
selecting a diamond semiconductor material having a surface; exposing the surface to a source gas in an etching chamber; forming a carbide interface contact layer on the surface; and forming a metal layer on the carbide interface contact layer. |
| 地址 |
Hoffman Estates IL US |
