发明名称 Active matrix substrate, production method, and display device
摘要 Disclosed is an active matrix substrate (5) on which pixels, each having a thin film transistor (18) and a pixel electrode (19) connected to the thin film transistor (18), are disposed in a matrix, and that includes a base material (5a) on which the pixels in a matrix are formed. In a contact hole portion (H), by anodically oxidizing a three-layered metal film (metal film) (21), an anodic oxidation film (29) is formed on the three-layered metal film (21) so as to fill a contact hole of a protective layer (27), with an end portion of the anodic oxidation film (29) being placed under an insulating layer (28). In the contact hole portion (H), the pixel electrode (19) and the three-layered metal film (21) are connected to each other via the anodic oxidation film (29).
申请公布号 US8933452(B2) 申请公布日期 2015.01.13
申请号 US201013512474 申请日期 2010.11.05
申请人 Sharp Kabushiki Kaisha 发明人 Ochi Hisao
分类号 H01L29/04;H01L29/49;H01L27/12;H01L29/45;G02F1/1362 主分类号 H01L29/04
代理机构 Keating & Bennett, LLP 代理人 Keating & Bennett, LLP
主权项 1. An active matrix substrate on which pixels, each having a thin film transistor and a pixel electrode connected to the thin film transistor, are disposed in a matrix, and that includes a base material on which the pixels in a matrix are formed, wherein, on the base material, a metal film connecting a drain electrode of the thin film transistor and the pixel electrode, a protective layer formed so as to cover the metal film, and an insulating layer formed on the protective layer are disposed, in each of the protective layer and the insulating layer, a contact hole of a contact hole portion connecting the pixel electrode and the metal film is provided, in the contact hole portion, an anodic oxidation film is formed on the metal film by anodically oxidizing the metal film so as to fill the contact hole of the protective layer with an end portion of the anodic oxidation film being placed under the insulating layer, and in the contact hole portion, the pixel electrode and the metal film are connected to each other via the anodic oxidation film.
地址 Osaka JP
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