发明名称 |
Apparatus having a dielectric containing scandium and gadolinium |
摘要 |
Apparatus having a dielectric containing scandium and gadolinium can provide a reliable structure with a high dielectric constant (high k). In an embodiment, a monolayer or partial monolayer sequence process, such as for example atomic layer deposition (ALD), can be used to form a dielectric containing gadolinium oxide and scandium oxide. In an embodiment, a dielectric structure can be formed by depositing gadolinium oxide by atomic layer deposition onto a substrate surface using precursor chemicals, followed by depositing scandium oxide onto the substrate using precursor chemicals, and repeating to form a thin laminate structure. A dielectric containing scandium and gadolinium may be used as gate insulator of a MOSFET, a capacitor dielectric in a DRAM, as tunnel gate insulators in flash memories, as a NROM dielectric, or as a dielectric in other electronic devices, because the high dielectric constant (high k) of the film provides the functionality of a much thinner silicon dioxide film. |
申请公布号 |
US8933449(B2) |
申请公布日期 |
2015.01.13 |
申请号 |
US201314099107 |
申请日期 |
2013.12.06 |
申请人 |
Micron Technology, Inc. |
发明人 |
Ahn Kie Y.;Forbes Leonard |
分类号 |
H01L21/3205;H01L21/4763;H01L49/02;H01L21/28;H01L29/792;H01L29/51;H01L21/314;C23C16/455;H01L29/788;H01L21/316;C23C16/40 |
主分类号 |
H01L21/3205 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. A memory device comprising:
a substrate comprising a plurality of diffusions; a dielectric layer formed on the substrate between the plurality of diffusions, the dielectric layer comprising GdXScYO3 formed as interleaved layers of scandium oxide and gadolinium oxide wherein a ratio of thicknesses of the interleaved layers is not equal; and a gate electrode formed on the dielectric layer. |
地址 |
Boise ID US |