Organic light-emitting substrate, method of manufacturing the same, and organic light-emitting display device having the same

摘要

An organic light-emitting substrate includes a base substrate, a gate line, a data line, a bias line, an organic light-emitting diode, a switching transistor, a driving transistor and a repair line. The bias line is spaced apart from the gate line and the data line. The organic light-emitting diode includes a pixel electrode, a common electrode and an organic light-emitting part. The switching transistor is connected to the gate line and the data line. The driving transistor is connected to the bias line, the pixel electrode and the switching transistor. The repair line is formed from a pixel metal layer that is identical to the pixel electrode to be spaced apart from the pixel electrode, and is formed along the first direction to be overlapped with the gate line. Therefore, the repair line may repair electric defects of the gate line.

主权项

1. An organic light-emitting substrate comprising:
a base substrate; a gate line formed on the base substrate along a first direction; a data line formed along a second direction crossing the first direction; a bias line spaced apart from the gate line and the data line; an organic light-emitting diode comprising a pixel electrode formed on the base substrate, a common electrode formed on the pixel electrode, and an organic light-emitting part formed between the pixel electrode and the common electrode; a switching transistor electrically connected to the gate line and the data line; a driving transistor electrically connected to the bias line, the pixel electrode and the switching transistor; a repair line formed of a same material and formed in a same plane as the pixel electrode and insulated from the pixel electrode, the repair line extending along the first direction; and a transistor-covering part patterned from the pixel metal layer that is used to form the pixel electrode and the repair line to cover the switching transistor, the transistor-covering part and the repair line being formed in one piece, and overlapping a gate electrode of the switching transistor, wherein the gate line and the transistor-covering part overlap a channel region which extends between a source region and a drain region of the switching transistor.