发明名称 Hybrid photoresist composition and pattern forming method using thereof
摘要 The present invention relates to a hybrid photoresist composition for improved resolution and a pattern forming method using the photoresist composition. The photoresist composition includes a radiation sensitive acid generator, a crosslinking agent and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group. At least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy. The photoresist is capable of producing a hybrid response to a single exposure. The patterning forming method utilizes the hybrid response to form a patterned structure in the photoresist layer. The photoresist composition and the pattern forming method of the present invention are useful for printing small features with precise image control, particularly spaces of small dimensions.
申请公布号 US8932796(B2) 申请公布日期 2015.01.13
申请号 US201113293672 申请日期 2011.11.10
申请人 International Business Machines Corporation 发明人 Chen Kuang-Jung;Huang Wu-Song S.;Liu Sen;Holmes Steven J.;Breyta Gregory
分类号 G03F7/004;G03F7/20;G03F7/028;G03F7/038;G03F7/039;G03F7/095 主分类号 G03F7/004
代理机构 代理人 Kellner Steven;Cai Yuanmin
主权项 1. A photoresist composition comprising: a first photoacid generator, wherein the first photoacid generator has a first activation energy level; a second photoacid generator, wherein the second photoacid generator has a second activation energy level, and wherein the second activation energy level is different than the first activation energy level; a negative crosslinking agent; and a polymer having a hydrophobic monomer unit and a hydrophilic monomer unit containing a hydroxyl group, wherein at least some of the hydroxyl groups are protected with an acid labile moiety having a low activation energy.
地址 Armonk NY US