发明名称 |
Phenolic polymers and photoresists comprising same |
摘要 |
The present invention relates to new polymers that contain phenolic groups spaced from a polymer backbone and photoacid-labile group. Preferred polymers of the invention are useful as a component of chemically-amplified positive-acting resists. |
申请公布号 |
US8932793(B2) |
申请公布日期 |
2015.01.13 |
申请号 |
US200812075726 |
申请日期 |
2008.03.12 |
申请人 |
Rohm and Haas Electronic Materials LLC |
发明人 |
Cameron James F. |
分类号 |
G03F7/004;G03F7/40 |
主分类号 |
G03F7/004 |
代理机构 |
Edwards Wildman Palmer LLP |
代理人 |
Edwards Wildman Palmer LLP ;Corless Peter F. |
主权项 |
1. A method of forming a positive photoresist relief image, comprising:
(a) applying on a substrate a layer of a photoresist comprising a photoactive component and a resin, the resin comprises a structure of the following formula wherein each Z is the same or different bridge unit; X comprises one or more alkyl, oxygen or sulfur atoms; each R1 is the same or different non-hydrogen substituent; and m is an integer of from zero to 4; AL is a moiety that comprises a photoacid-labile group; Y is a moiety that is distinct from the spaced phenolic group or moiety that comprises AL, and Y is selected from the group consisting of phenyl; phenyl substituted with halogen, cyano, alkyl or alkoxy; and an ester that does not undergo a photoacid-indueed cleavage reaction during exposing and developing of the photoresist layer; a, b and c are mole percents of the respective polymer units based on total repeat units in the polymer and a, b and c are each greater than zero; and (b) exposing and developing the photoresist layer to yield a relief image. |
地址 |
Marlborough MA US |