| 摘要 |
An objective of the present invention is to provide a method of processing a substrate for burying a film forming material without void in a DED process in a vertical substrate processing apparatus. The method of processing a substrate for burying a film forming material in a recess of a pattern by a first film forming process, a first etching process and a second film forming process with respect to a substrate having a concavo-convex pattern uses: a process container to dispose a substrate holder for maintaining a plurality of sheets of substrates in multiple layers at predetermined intervals; a heater to heat the inside of the process container; a process gas introducing part to introduce a film forming gas and an etching gas to the process container; a vertical substrate process apparatus having an exhaust part to exhaust the inside of the process container; and a controller to control an operation of the vertical substrate process apparatus. The method includes calculating a first film forming condition including a first film forming time of the first film forming process, a first etching condition including a first etching time of the first etching process, and a second film forming condition including a second film forming time of the second film forming process by the control apparatus such that the film forming material is filled in the recess without any void after the second film forming process; and performing the first film forming processing, the first etching processing and the second film forming processing on the substrate based on the calculated first film forming condition, first etching condition and second film forming condition. |
