Organic light emitting diode display and method for manufacturing the same

摘要

An organic light emitting diode (OLED) display and a method for manufacturing the same are described. An exemplary embodiment provides an OLED display including: a substrate including a plurality of pixel areas; a light emitting unit including an organic light emitting diode and a plurality of first thin film transistors, the light emitting unit being formed in each of the plurality of pixel areas; and a sensor unit including a photosensor and a plurality of second thin film transistors, the sensor unit being formed in at least some of the plurality of pixel areas. Each of the plurality of first thin film transistors and the plurality of second thin film transistors includes an oxide semiconductor layer, and the photosensor includes an oxide photoelectric conversion layer that are made of a same material on a same layer as the oxide semiconductor layer.

主权项

1. An organic light emitting diode display comprising:
a substrate comprising a plurality of pixel areas; a light emitting unit in each of the plurality of pixel areas, the light emitting unit comprising an organic light emitting diode and a plurality of first thin film transistors; a gate line, a data line, and a light emitting power line each electrically coupled to the plurality of first thin film transistors; and a sensor unit in each of at least some of the plurality of pixel areas, the sensor unit comprising a photosensor and a plurality of second thin film transistors, wherein each of the plurality of first thin film transistors and the plurality of second thin film transistors comprises an oxide semiconductor layer and a gate electrode between the oxide semiconductor layer and the substrate, and the photosensor comprises an oxide photoelectric conversion layer, the oxide semiconductor layer and the oxide photoelectric conversion layer comprising a same material on a same layer, wherein the gate line, the data line, and the light emitting power line comprise a same material as and are on a same layer as the gate electrodes of the first thin film transistors.