METHOD FOR PRODUCING COPPER MATERIAL FOR USE AS SPUTTERING TARGET

摘要

Disclosed is a copper material for use as a sputtering target, the copper material being constituted of high-purity copper having a purity of 99.99% or higher, wherein the sputtering plane, a plane which is parallel to the sputtering plane and is located at a depth of 1/4 the plate thickness from the sputtering plane, and a plane which is parallel to the sputtering plane and is located at a depth of 1/2 the plate thickness from the sputtering plane each has an arithmetic-average crystal grain diameter of 100-200 µm, the standard deviation of crystal grain diameters in each of the planes and the standard deviation thereof in the planes being within 10 µm. Also provided is a process for producing the copper material.